1、

Development of X-ray detector based on silicon photodiode array

基于硅光二极管阵列的X射线探测器的研制

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2、

study of the plasma produced by yag laser acting upon silicon photodiode

YAG激光诱导硅光二极管产生等离子体的研究

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3、

an investigation of silicon photodiode readout for domestic bgo scintillation light

国产锗酸铋(BGO)闪烁体荧光的硅光二极管读出方法的研究

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4、

Through the experiment, we measured two kinds of typical photoelectric detectors: the electrical parameters of silicon photocell and PIN photodiode are measured after laser irradiation.

通过实验测量了两种典型的光电探测器:硅光电池和PIN光电二极管的主要电学参数在受到飞秒激光辐照后的变化。

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5、

For these reasons, we committed a photodiode scintillation detectors base on silicon PIN photodiode and NaI ( Tl) crystal, In this research, we have designed a gamma radiation detection instrument which using a new type scintillator detector.

基于以上诸多因素,展开对基于硅PIN光电二极管和NaI(Tl)晶体的闪烁探测的研究。在本研究中,设计了一款采用了一种新型闪烁探测器的γ辐射检测仪。

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6、

An initiative scheme is given to integrate the spectrometer, imaging system and high sensitivity photodiode array in a three dimension silicon chip.

讨论了实验分光系统、成像系统和高灵敏度探测器列阵混合集成在一块三维硅基片上的初步方案。

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7、

The structure, preparation and properties of amorphous silicon ( a-Si) material were de-scribed. The application of a-Si in sensors, such as photodiode, colour sensor, X-ray sensor and stress sensor etc.

叙述了非晶硅半导体的结构、制备方法及特性,介绍了非晶硅在制作光电传感器、色敏传咸器、放射线(X射线等)传感器及应变传感器等方面的应用。

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