silicon crystal的例句大全

This papers models and analyses the silicon crystal 100 surface reconstruction and relaxation with the molecular dynamics simulation and first principal theory abinitio calculation.

本文利用分子动力学模拟方法和量子物理从头算法，对单晶硅100表面的重构和弛豫进行模拟分析。

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Effects of temperature coefficient of surface tension on the silicon crystal Czochralski growth

表面张力温度系数对硅单晶生长的影响

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Numerical Analysis of Coil Step to Improve FZ Silicon Crystal Growth

线圈台阶对区熔硅单晶生长影响的数值计算分析

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Molecular dynamics study on thermal conductivity of silicon crystal

硅晶体热传导性能的分子动力学模拟

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Adding Na element would cause the growth velocity of silicon crystal to quicken.

钠元素的变质作用可能在于改变硅晶体生长环境促使晶体生长速度加快，超过临界生长速度值，迫使共晶硅晶体的形态发生改变。

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Positron lifetime change during isochronal annealing of hydrogen FZ silicon crystal

氢气氛区熔硅单晶等时退火过程中的正电子寿命谱研究

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Local Mode and the Infrared Absorption of Substitutional Carbon in Silicon Crystal

代位式碳在硅单晶中的局域模与红外吸收

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We can change the behavior of a pure silicon crystal by doping it.

当纯矽的晶体和其它不纯物混杂在一起,矽的本质会改变.

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measurement and study of the stresses in silicon crystal with infrared polariscope

用红外光弹仪测量研究硅单晶应力

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The result reveals the significant size effect that the conductivity of silicon films along the film plane is lower than that value in bulk silicon crystal at corresponding temperature and decreases with the decreasing of film thickness.

模拟表明薄膜面向热导率小于相应的大体积值，并随膜厚度减小而减小，具有显著的尺寸效应。

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Study of Manganese Doped p-type Single Crystal Silicon in the Daubing Source

p型单晶硅涂源掺锰新方法

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This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

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Single crystal silicon slice as target, Ar and O_2 respectively as sputtering and reacting gas, a silicon oxides ( SiO_x) film was deposited on Al substrate by reactive magnetron sputtering.

以单晶硅片为靶材，高纯Ar和O2分别为溅射气体和反应气体，采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

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The Surface Effect of FZ Single Crystal Silicon Grown in Hydrogen Atmosphere on ESR

含氢单晶硅的ESR面效应

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Drawing of single crystal silicon in closed thermal system

密闭热系统中拉制硅单晶

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The diamond turning surface of single crystal silicon and germanium appears distribution feature alternate with brightness and darkness.

单晶硅、锗的超精密车削表面存在明暗相间的分布特征。

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GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。

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with the application of single crystal silicon in solar photovoltaic and the semiconductor industry more widely, carbon materials used as thermal field parts developed more quickly.

随着单晶硅在太阳能光伏行业和半导体行业的应用越来越广泛，炭素材料作为直拉单晶硅炉重要的热场材料也得到迅速发展。

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the paper made a research on the influence of mg_3n_2 as catalyst on the obtained crystal quantity and quality, the influence of ain additive and atmosphere on the forming of cbn, cbn's forming with the participation of boric anhydride, cbn crystallization with silicon.

文章就用Mg3N2作触媒对cBN晶体得量和质量的影响、AlN添加物和不同气氛对cBN合成的影响、硼酐参与下cBN的形成、硅参与下cBN结晶过程等进行研究；

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This article introduces the precise screen printing technology for fuel battery, crystal silicon solar battery and semiconductor solar battery.

介绍了绿色新兴能源燃料电池、晶体硅太阳能电池、化合物半导体太阳能电池制造技术中的精密网版印刷技术；

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