semiconductor material的例句大全

Zinc oxide nano material is a new type direct wide band gap semiconductor material, which has important applications in optical-electron devices.

纳米ZnO是一种新型的宽能带直接带隙多功能半导体材料。

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Study of the Characteristic and Parameters of Semiconductor Material

半导体材料特性和参数研究

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Analyse the standard of SEMI semiconductor material

SEMI半导体材料标准的分析

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AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap, which has wurtzite structure too.

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

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Review was made on GaN based wide gap semiconductor material and devices, especially for p-type material manufacture, metal-semiconductor contact, material etching, etc.

对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾，重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。

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A Design of Constant Current Source System on Semiconductor Material Resistivity Measurement

一款半导体材料电阻率测量的恒流源系统设计

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As a new type of wide bandgap semiconductor material, ZnO thin film is widely used.

ZnO薄膜作为一种新型宽带隙半导体材料，有其广泛应用。

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Zinc oxide thin films, a high-quality semiconductor material, can be used as a material of electrical transmission layer in negative electrode of the emission of thin films.

氧化锌是一种性能良好的半导体材料，可以用作薄膜场发射阴极中的电子传输层材料。

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Poly crystal silicon, as the important electrical and semiconductor material, is of strategic importance and economic benefits for the construction of Silicon Industry Base with Annual Output of thousand tons.

多晶硅是重要的电子与半导体原材料，建设千吨级硅产业基地具有重要的战略意义与经济效益。

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The development of international semiconductor material, technique and PIC/ OEIC devices in recent two years are presented.

本文主要介绍了最近两年国外半导体材料技术、工艺技术的进展以及PIC／OEIC器件的研制状况。

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ZnO, with a wide bandgap ( 3.37eV) at room temperature and larger exciton binding energy ( 60meV), is a II-VI compound semiconductor material, and has wide application prospects in optoelectronic devices such as short-wavelength laser diodes and ultraviolet photodetectors.

ZnO是Ⅱ-Ⅵ族宽带隙半导体材料，室温下禁带宽度约为3.37eV，激子束缚能约为60meV，在短波长激光二极管与紫外光探测器等光电器件领域具有非常广阔的应用前景。

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cadmium oxide ( cdo) is a direct wide bandgap semiconductor material.

氧化隔是一种宽禁带直接带隙化合物半导体。

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The thermal effect of the interaction of the laser with semiconductor material is one of the most important physics phenomena when the laser irradiates semiconductor surface.

激光与半导体材料相互作用的热效应是激光束入射于半导体材料后发生的主要物理现象之一。

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ZnO is a semiconductor material with photo-voltage property.

ZnO薄膜具有光电转换特性，有望成为太阳能电池材料；

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As an n-type semiconductor material with direct and wide band gap, zinc oxide was widely used in transparent conductive glass, solar cell, flat panel display, gas sensors cell and other fields.

ZnO是一种直接宽禁带的n型半导体材料，已在透明导电玻璃、太阳能电池、平板显示器和气敏传感器等领域得到了广泛应用。

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The smallest unit that supports electron flow in a semiconductor material; a hole in P-type silicon or a free electron in N-type silicon.

在半导体材料中维持电流的最小单元，在P型硅中是空穴，在N型硅中是自由电子。

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Marketing Strategy Studying of Semiconductor Material Division, MM China

MM跨国公司半导体材料部中国市场营销战略研究

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ZnO thin film is a novel semiconductor material with excellent performance.

ZnO薄膜是一种新型的、性能优良的半导体材料。

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The numerical calculation on displacement damage of Si and GaAs semiconductor material irradiated by neutron

中子对Si及GaAs半导体材料位移损伤的数值计算

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Surface temperature property of semiconductor material irradiated by pulsed laser

脉冲激光辐照下半导体材料表面的温度特性

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