1、

Besides the positive temperature coefficient of resistance effect above the Curie temperature, it also exhibit a strong negative temperature coefficient of resistance below the Curie temperature.

该材料的主要特性是在居里温度Tc以下呈现较强的NTC效应,而在Tc以上则表现为PTC效应。

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2、

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR).

氧化钒薄膜由于具有高电阻温度系数(TCR),近年来被广泛应用于非制冷红外探测及红外成像领域。

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3、

OP07 series of operational amplifer is recommended; the fixed temperature coefficient of resistance in the circuit must be over50PPM.

运算放大器推荐使用OP07系列,电路中的固定电阻温度系数要求优于50PPM;

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4、

Measuring principle and sensitivity of non-balanced bridge is analyzed. A method of measuring temperature coefficient of resistance by this bridge has been discussed in this paper result is accurate.

本文分析了非平衡电桥的测量原理及灵敏度,提出了一种测量电阻温度系数的方法,实测结果说明该方法是正确的。

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5、

TaN thin films possess wide resistively, low temperature coefficient of resistance and chemical inert properties, which can be widely used in microwave power resistors.

TaN薄膜具有宽电阻率、低电阻温度系数以及自钝化特性而被广泛应用于微波功率电阻器中。

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6、

It is the key for the devices to select the film for material with large temperature coefficient of resistance and the detector structure of good thermal isolation ( i.e. bridge structure).

指出了选用具有大的电阻温度系数的膜电阻材料和优良的热绝缘结构(如桥式结构)是研制器件的关键。

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7、

The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped.

结果表明,适量的Ag掺杂对材料的室温电阻率(r)影响不大,并且还可以有效提高PTCR陶瓷的温度系数(aR)和耐电压(Vb)。

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8、

And then, photolithography and wet etching were used to pattern the ITO films for electrical measurement, which involved the measurement of temperature coefficient of resistance and the gauge factor.

然后用光刻和刻蚀的方法制作电学测试所需的图形。对于ITO薄膜的电学测试包括对其电阻温度系数和响应因子的测量两部分。

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9、

From resistance-temperature ( R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance ( TCR) of the films are increased after annealing.

电阻温度特性测试表明,退火后薄膜的电阻(R)和电阻温度系数(TCR)都明显增大。

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10、

As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.

氧化钒薄膜作为非制冷红外探测器的热敏材料,要求具有高的电阻温度系数(TCR)与合适的电阻值,以满足器件的应用。

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11、

The trend of new technique for manufacturing Ni-Cr alloy thin film with a combination of characteristics: high resistivity, low temperature coefficient of resistance ( CR), large gauge factor, and good thermal stability is presented.

阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势。

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12、

Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.

通过制备具有高电阻温度系数(TCR)的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上,提高了微测辐射热计的性能。

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13、

For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance ( TCR).

与低氮含量Cr Si Ni N薄膜相比,高氮含量Cr Si Ni N薄膜的电阻值在热处理过程中变化较小、欲获得较小电阻温度系数(TCR)需要更高的退火温度。

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14、

C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.

根据薄膜理论和工艺实验,采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化,获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜,与块材接近,实现了锰铜压力传感器的薄膜化。

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15、

The test results show that the micro temperature sensing element on PI film exhibits good linearity and a temperature coefficient of resistance is close to 0. 0023/ ℃.

实验测试结果表明,PI村底上的铂薄膜热敏电阻具备良好的线性度,其电阻温度系数接近于0.0023/℃。

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16、

The test results indicate that there is significant difference between transition temperature, hysteresis width and temperature coefficient of resistance of the films prepared by the two methods.

对两种方法制备薄膜的性能测试结果表明,其转换温度、相变滞豫、热电阻温度系数等都有较大差别。

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17、
18、

Thermal Coefficient of Resistance of Vanadium Oxide Film Formed by Ion-Beam-Enhanced Deposition

离子束增强沉积氧化钒薄膜的温度系数

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