1、

To achieve machining characteristics of brittle materials on the nanometer scale using an AFM diamond tip as the cutting tool, scratching tests and machining tests were carried out on the surface of monocrystal silicon based on AFM.

为获得AFM金刚石微探针在纳米尺度上加工脆性材料的加工特性,在AFM系统上对单晶硅表面进行了刻划、加工实验。

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3、

The application and research of the puller for monocrystal silicon with solar cell

国产太阳能硅单晶生长设备的应用研究

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4、

Structural Evolvement of Proton-Impregnated Monocrystal Silicon Chips

质子注入单晶硅中的结构演化

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5、

The experimental curve fits quite well with the theoretical one, which indicates that the method using the critical angle of total reflection of monocrystal to calibrate the grazing-exit angle is feasible.

理论计算与实验曲线符合的较好,证明掠出射X射线荧光实验中用单晶的全反射临界角标定掠出射角度的方法是可行的。

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6、

Use: Used as an analytical reagent and an iodine solubility promoter , and to preparae monocrystal.

用途:分 析试剂.碘的助溶剂.制备单晶的原料.

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7、

Development of Monocrystal Diamond Tool to Grind Multifunction Clamp System

单晶金刚石刀具研磨多功能夹具系统的研制

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8、

Micromachining of Monocrystal Silicon by Excimer Laser Direct Etching

准分子激光直接刻蚀单晶硅研究

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9、

control of crystal transformation and mixed crystals of some zeolites and optimum conditions for synthesis of monocrystal zeolites

几种分子筛转晶和混晶的控制及单一晶体的优化合成

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10、

and draws a conclusion that doped n type monocrystal silicon is quite fit for micro edm, while a non doped one isn't by a lot of edm experiments.

对未掺杂单晶硅和掺杂N型硅进行了电火花加工工艺试验,得出了掺杂N型硅有很好的微细电火花加工性能的结论。

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11、

Monocrystal molybdenum is a kind of widely used and important refractory metal.

钼单晶是一种广泛应用的重要的难熔金属材料.

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12、

Ni _ 3 Al monocrystal can be prepared by means of Bridgman directionalsolidification.

采用Bridgman定向凝固 方法可以制得Ni_3Al单晶体.

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13、

Optical spectra of di-carbon center after annealing in silicon monocrystal

对单晶硅里双碳中心经退火后的光谱研究

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14、

This new product is crumb structure instead of platy monocrystal.

得到的新产品不是针片状单晶颗粒,而是团粒结构的颗粒,颗粒形状为等积形,表面粗糙,凹凸不平。

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15、

The monocrystal cost is partially determined by the performance of the grower and the crucible charge.

影响单晶成本的部分因素是单晶炉的性能和单晶炉的装料量。

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16、

The concentration control of silicon doping in VB-GaAs monocrystal growth process was discussed. The modification to the factor of doping silicon into GaAs bulk was proposed.

结合VB-GaAs晶体生长工艺,对工艺中掺Si浓度的控制进行了探讨,提出了掺杂计算的修正因子。

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17、

Computation of Magnetic Field in MCZ Monocrystal Furnace

MCZ单晶炉内磁场的计算

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18、

The conclusions can be referenced when the equipment generating magnetic field of MCZ monocrystal furnace is designed.

分析讨论的结果可供设计MCZ单晶炉的磁场发生装置时参考。

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19、

Numerical integral method to compute magnetic field in MCZ monocrystal furnace is applied and the computing program flowchart and numerical solutions are given in this paper.

本文采用数值积分法计算MCZ单晶炉内的磁场。文中给出了计算程序框图及数值解。

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