molecular beam的例句大全

Chromium oxide films grown by molecular beam epitaxy on MgO ( 001) substrates were characterized by x_ray diffraction ( XRD) and x_ray reflectivity ( XRR) measurements.

采用分子束外延技术（MBE）在MgO（001）基板上沉积了氧化铬薄膜，并利用x射线衍射（XRD）和x射线反射谱（XRR）对薄膜的晶体结构进行了表征。

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Room temperature Raman scattering in cdte/ znte superlattice grown by molecular beam epitaxy

分子束外延生长CdTe/ZnTe超晶格室温喇曼散射

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Progress in surface oval Defects Study on molecular beam epitaxy grown materials

分子束外延材料表面椭圆缺陷的研究进展

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The local structures of Pt thin films grown by molecular beam epitaxy with the thickness range from 3 to 105 nm have been studied by the grazing incidence fluorescence XAFS technique.

利用荧光X射线吸收精细结构（XAFS）技术研究了厚度为3&105nm范围的分子束外延生长的Pt金属薄膜的局域结构。

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Topmost surface and growth mechanism of batio_3 thin film grown by laser molecular beam epitaxy

激光分子束外延BaTiO3薄膜最顶层表面原子平面与薄膜生长机理

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BaTiO 3 ( BTO ) ferroelectric thin films were deposited directly on Si ( 100 ) single crystal substrates with laser molecular beam epitaxy ( LMBE ).

利用激光分子束外延(LMBE ) 方法在Si ( 100 ) 基片上直接生长BaTiO3 ( BTO ) 铁电薄膜.

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Optimization analysis of tokamak plasma fuelling with the supersonic molecular beam ( SMB ) has been made.

对用于托卡马克等离子体加料的超声分子束系统进行了优化分析.

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The growth by Molecular beam epitaxy ( MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces.

分子束外延（MBE）能够实现原子量级浮动和化学成分突变的异质界面。

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Multiphoton ionization ( MPI) mass spectra distributions of tetramethylsilane in gaseous phase are investigated using a quadrupole mass spectrometer and a pulsed molecular beam at 355 nm laser radiation.

在355nm的激光作用下，利用扩散分子束技术和四极质谱装置相结合研究了气相Si（CH3）4分子多光子电离（MPI）质谱分布。

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Laser multiphoton ionization mass spectra of Fe ( CO) 5 were studied at 355 nm, 632 nm and 355nm+ 532nm, with a supersonic molecular beam and a time-of-flight mass spectrometer.

利用超声分子束、强激光多光子电离和飞行时间质谱探测装置研究了Fe（CO）5分子在355nm、532nm和355nm+532nm单、双色激光作用下的多光子电离质谱。

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In this work we present the detailed results about the studies of the multiphoton ionization of ammonia-alcohol clusters, which were performed by using a molecular beam, the laser multiphoton ionization and a time-of-flight mass spectrometer as well as ab initio calculations.

本论文中，作者通过激光、分子束和飞行时间质谱并结合从头算理论对氨与醇的二元氢键团簇的多光子电离作了系统的研究。

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The gas-phase reactions between laser ablated Al atom and four different kinds of halomethane ( CCl_4, CF_3Cl, CF_3Br, CF_4) are studied by laser photoionization time-of-flight mass spectrometer ( TOF-MS) coupled with a pulse molecular beam device.

利用分子束和飞行时间质谱技术研究了激光烧蚀金属Al原子与4种不同的卤代甲烷：CCl4、CF3Cl。CF3Br、CF4的气相反应。

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The mass distribution of the products for thermal reaction at surface temperature range of 300K-750K has also been studied by a chopped molecular beam and quadrupole mass spectroscopy using Lock& in amplifier technique.

同时以调制分子束技术和锁相放大探测方法研究了在表面温度300K-800K范围内Cl2和Inp（100）热反应产物的质量分布。

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ZnO films can be deposited by a variety of deposition techniques. Magnetron sputtering, metal-organic chemical vapor deposition, pulsed laser deposition, molecular beam epitaxy and reactive e-beam evaporation are main methods for the preparation of high-quality ZnO films with strong c-axis orientation.

在已开发的众多生长技术中，磁控溅射、金属有机物气相沉积、脉冲激光沉积、分子束外延、电子束反应蒸镀法是生长出高度c轴择优取向优质薄膜的主要方法。

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Angular distribution studies on the reactive scattering of cl_2 molecular beam with inp ( 100) surface

氯分子束与InP（100）表面反应散射的角分布研究

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The gas phase reactions of Cu+? Ag+? Au+ with ethanethiol have been studied by using laser ablation molecular beam method in conjunction with a reflection time of flight mass spectrometer.

利用激光溅射分子束的技术，结合反射飞行时间质谱计，研究了Cu+、Ag+、Au+与乙硫醇的气相化学反应。

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The gas phase reaction of the singly positive charged aluminum ion with ethanethiol molecule clusters was investigated by the laser ablation molecular beam method. The cluster ions composed of Al+ and 1~ 6 ethanethiol molecules are produced.

利用激光溅射-分子束的方法研究了Al+和乙硫醇的气相化学反应，结果观察到了Al+与1～6个乙硫醇分子形成的团簇离子。

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Structure and properties of InGaP/ GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source

分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能

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The Special ionizer Design for Using in High Resolution Molecular Beam Experiment

适用于高分辨率分子束实验的离子源

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Void defect of molecular beam epitaxial HgCdTe layer grown on GaAs substrate

分子束外延碲镉汞薄膜中VOID缺陷的研究

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