1、

A design for output of limiting voltage circuit of WB serial electric consumption isolation sensor

WB系列电量隔离传感器的输出限压电路的设计

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2、

The measuring results have shown that the varistors developed have many advantages of fast responding, low limiting voltage, good temperature behaviour and great flux density.

应用试验结果证实,所研制的电阻器具有响应速度快,限制电压低,温度特性好,通流能力大等优点。

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3、

Selection of Reactance Value of Low Voltage Side Current Limiting Reactor in Substation

变电站低压侧限流电抗器电抗值的选择

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4、

Based on voltage and current limit equation limit equation is deduced and the active current and reactive current limiting value, and on this basis weak magnetic controller is designed.

在电压限制方程和电流限制方程基础上推导出id和iq上下限值,并在此基础上设计弱磁控制器。

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5、

Although reactive-load compensation equipment based on magnetic valve controllable parallel reactor can conduct infinitely variable control of reactive capacity and the excitation system is not affected by the voltage level, its response time is long, thus limiting its applications.

基于磁阀式可控并联电抗器的无功补偿设备虽然能够无级调节无功容量,且励磁系统不受电压等级的影响,但是其响应时间较长,因而限制了其应用场合。

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6、

Based on optoelectronic measuring system, arc voltage drops are observed in arc running process of current limiting circuit breaker.

本文采用光电测试系统,观察到在低压限流断路器开断过程中的电弧电压跌落现象。

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7、

With a chutes arc quenching chamber, current limiting circuit breaker can lift the arc voltage to a high value through polar voltage drop and limit the short circuit current while interrupting circuit.

它采用多个栅片的灭弧室,利用近极压降将进入到灭弧室中的电弧电压提升到一个较高的值,从而在开断电路的同时还起到对短路电流的限制。

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8、

Lightning Current Withstand Capacity and Voltage Limiting Characteristics of TVS

瞬态电压抑制器的雷电通流与箝压特性测试

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11、

protection research on limiting lock-gate of electric arc furnace transformer by using large voltage limiter

用大幅度限压器限制电弧炉变压器分闸过压保护研究

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12、

low voltage circuit breaker with ptc current limiting element

应用PTC限流元件的低压断路器

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13、

A New High Voltage Dropout Fuse with Current Limiting Characteristics

一种具有限流特性的新型跌落式高压熔断器

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14、

This paper presents a comprehensive analysis on breakdown voltage design of VD-MOSFET with the terminal structure of field limiting rings.

本文针对VD-MOSFET击穿电压,采用场限环终端结构的耐压设计,并进行了综合分析。

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