1、

In this paper, Focused Ion Beam Lithography technology and is introduced.

对聚焦离子束曝光技术作了介绍.

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2、

The development of soft X-ray CZP included design of optical path, selection of material, preparation of thin film, sub-micron lithography, X-ray lithography, reactive ion etching, ion beam etching, electroplating and chemical etching.

软X射线聚焦波带片的研制包括光路设计、膜系设计、衬底选择、薄膜制备、亚微米光刻、X射线光刻、反应离子刻蚀、离子束刻蚀、电镀和化学腐蚀等多种微细加工技术。

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3、

The novel methods include nano-imprint, laser interference lithography, x-ray lithography, electron beam lithography, focused ion beam and so on.

包括纳米压印、激光干涉光刻、x射线光刻、电子束光刻、聚焦离子束刻蚀等。

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4、

GaAs/ AlGaAs quantum dots were made by Electron Beam Lithography ( EBL) and Reactive Ion Etching ( RIE) on GaAs/ AlGaAs quantum well wafers. Their photoluminescence shows blue shift, the amount of blue shift increases with the decrease of quantum dot size.

采用电子束曝光和反应离子刻蚀的工艺,将GaAs/AlGaAs量子阱外延材料制成量子点阵,其光荧光谱显示出蓝移,并且蓝移量随着量子点直径尺寸的减少而增大。

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