gate voltage的例句大全

luminescence intensity increased, but the role of the gate voltage to control current is not ideal.

器件的发光强度有所提高，但栅压对载流子的控制作用不理想。

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the emission current density at the apex was found to be the highest, depending exponentially on the gate voltage.

电流密度在纳米线顶端边缘处最大，而且随着栅极电压的增加而呈指数增加。

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v vgd non-triggering gate voltage

门极不触发电压

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slowly-drop gate voltage and softly turn-off principles are explained in this article, specific parameters are also listed.

阐述了软降栅压和软关断的过电流保护原理，列出具体的保护时序参数。

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erasing the memory devices can include applying a gate voltage to the wordlines and applying a bias voltage to the dummy wordlines.

存储装置的擦除可包含：施加栅极电压至字线且施加偏压至虚拟字线。

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fig. 13 shows that a change of the gate voltage from 10v to 15v hardly influences the spectrum.

图13展示出栅源极电压从10伏特到15伏特变化几乎不对干扰频谱产生影响。

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in this way the spin-dependent transport through the quantum wire can be reversed by the gate voltage applied to the quantum dot.

因此通过控制量子点上的电压可以实现量子线上的自旋输运反转。

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the appropriate spectrum for 6 a peak drain-current, 13 v gate voltage and 380 v drain-source voltage has been chosen as reference.

为在峰值6安培漏极电流下获得适当的频谱，选择13伏特的栅源极电压和380伏特的漏源极电压为参考。

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The variation of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated.

在此基础上，对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究。

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The body region was doped high to increase the back gate threshold voltage.

增加体区掺杂，以提高背栅阈值电压；

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The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.

a-Si∶H/sin x∶H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。

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The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage, sub-threshold slope and saturation driving current severely. So, it's a very important factor for good device characteristics to optimize the thin film thickness.

仿真结果显示硅膜厚度对SOI槽栅MOS器件的阈值电压、亚阈值特性和饱和驱动能力都有较大影响，选择最佳的硅膜厚度是获得较好的器件特性的重要因素。

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Simulation results show that the doping profile and width of P base region are important to the on-state voltage drop of Gate Controlled Thyristor.

模拟结果表明，P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响。

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Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.

阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管（HVIGBT）斩波器替代门极可关断晶闸管（GT0）斩波器，以实现静止辅助系统的国产化。

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VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

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IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.

IGBT（绝缘栅控双极型晶体管）是电力电子技术中的主流开关功率器件，由于开通／关断速度快、通态压降小等优点，在电力电子装置中得到广泛的应用。

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tunneling allows voltage to flow from the control gate to the floating gate through the dielectric layer of oxide which separates them.

允许从隧道流电压控制的浮动栅栅绝缘层氧化物通过分隔他们。

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the program times were determined by variation of charge quantity on float gate with time to satisfy threshold voltage window.

分析浮栅电荷量及阈值电压变化同擦写时间的关系，由此确定满足读出0／1信息要求的擦写工作条件。

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a novel analytic model on surface voltage and electric field of the drift of offset-gate mos

一种新型偏置栅MOS管漂移区表面电压和电场的分析模型

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when a voltage is applied to the insulated gate terminal, a current is enabled to flow from the drain to the source.

当一个电压到绝缘门终端，使电流流动的排水的来源。

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