1、

An Anomaly Phenomenon of the Interaction Between Donor Doping and Acceptor Doping in Highly Donor-Doped BaTiO_3 Ceramics

高施主掺杂BaTiO3陶瓷中施、受主杂质相互作用的一种异常现象

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2、

Effect of Liquid-phase Donor Doping and High Calcium Adding on Performance of PTC Material

液相施主及高钙添加对PTC材料性能的影响

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3、

Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired.

采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。

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4、

Research on Donor Doping of TiO_2-based Varistor Ceramics

TiO2系压敏陶瓷施主掺杂研究

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5、

Common donor dopants are Y 3+ and Nb 5+ Usually donor doped content lies in range from o 2 to 0 3 percent Factors influencing on the content are purity of used raw materials, flux for sintering, donor doping process and the others.

常用的施主加入物是Y3+和Nb5+,施主掺入量一般控制在x=0.2%~0.3%为宜。影响施主掺入量的因素有原料纯度、烧结助剂、掺入施主的工艺等。

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6、

The effects of donor doping amount, cooling conditions after sintering and oxidation temperatures on the semiconductivity of SrTiO_3 have been studied.

研究了施主掺杂量,烧成后的冷却条件、氧化温度对SrTiO3半导化的影响。

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7、

Research on Semiconductor Ceramic Materials: Double Donor Doping BaTiO_3

双施主掺杂BaTiO3半导体陶瓷材料的研究

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8、

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因,是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

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9、

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素,可以获得P型半导体薄膜,从而对于发展具有P-N结结构的半导体材料有重大帮助。

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10、

at low bias, the introduction of the donor atom nitrogen and acceptor atom boron can weaken the electron transport, especially the acceptor doping significantly suppresses the electron transport.

在低偏压下,引入的给体原子N和受体原子B都削弱了C60的电子输运,特别是B原子掺杂对电子输运有重要的抑制作用。

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