breakdown voltage的例句大全

Using chemical mesa etching to increase the breakdown voltage.

化学腐蚀形成台面提高反向击穿电压；

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the source-measure unit can also test other diode parameters, including forward voltage drop and breakdown voltage.

源 - 测量单元还可以测量其它的二极管参数, 包括正向电压降和击穿电压.

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The results are summarized, so as to express the breakdown voltage as nonlinear function of the spacing of the contact.

试验结果证明，触头间隙的击穿电压是触头间距的非线性函数。

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The enamel wire has excellent heat resistance with 293 ℃ of glass transition temperature ( Tg), and the cut-through temperature and breakdown voltage are obviously higher than the national standard of 240 class round aromatic polyimide enamel copper-wire.

此种漆液涂制而成的漆包线具有出色的耐热性，玻璃化转变温度可达293℃，软化击穿温度和击穿电压明显高于240级芳族聚酰亚胺漆包圆线国家标准。

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Compared with conventional TG-LDMOS, the breakdown voltage of the new structure is improved by 30V with the same length of the drift region and on-state resistance, and the structure shows excellent RF characteristics.

与传统的槽栅器件结构相比，新结构在相同的漂移长度和导通电阻下，击穿电压提高了30V，并表现出优异的频率特性。

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The experimental results demonstrate that this structure is desirable for application in power SIDs. Its advantages are high breakdown voltage and blocking gain.

实验结果表明该结构可用于制造各种功率静电感应器件，其优点是具有高的击穿电压和高的阻断增益，并讨论了平面型埋栅结构的主要特点和制造工艺。

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The TVS chips whose breakdown voltage is higher than the ignition voltage, which has larger junction capacitance and smaller parasitic resistance, should be selected to protect SCB device from electromagnetic.

选择TVS芯片对SCB火工品进行电磁防护时，在满足击穿电压高于发火电压的情况下，应尽量选择结电容较大、寄生电阻较小的芯片。

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But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.

但就制备高反向击穿电压的微波PIN二极管而言，这些工艺已不能满足要求。

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In general, the values of the transformer oil breakdown voltage measured under test conditions at room temperature do not represent their breakdown voltage level at low temperatures.

一般情况下，在常温试验条件下测得的变压器油击穿电压值不能代表其在低温环境下的击穿电压水平。

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calculation of punch through limited breakdown voltage for parallel plane junction has been examined in this paper.

本文研究平行平面穿通结击穿电压的计算。

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From this analysis, the optimum design condition for the maximum breakdown voltage is obtained.

在此基础上，推出了为获得最大击穿电压的优化条件。

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The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped.

结果表明，适量的Ag掺杂对材料的室温电阻率（r）影响不大，并且还可以有效提高PTCR陶瓷的温度系数（aR）和耐电压（Vb）。

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It is indicated that excellent characteristics of off state leakage current at high temperatures and very high off state breakdown voltage and sufficiently large forward current and low forward voltage drop may be obtained by reasonable designs.

指出，通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流，很高的截止态击穿电压，足够大的正向导通电流和足够低的正向导通压降。

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The Numerical Analysis of Breakdown Voltage of GAT

GAT管击穿电压的数值分析

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For improving breakdown voltage ( BV_ ( gso), BV_ ( gko)), at the same time assuring good I-V characteristic, we did many experiments.

为了在尽量提高击穿BV（GSO）（BV（GKO））的同时，能够保证良好的Ⅰ-Ⅴ特性，我们做了大量的实验。

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Calculation of Low Probability Impulse Breakdown Voltage in the SF6 Gap

SF6气体间隙低概率冲击击穿电压的计算

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The breakdown voltage of punch through P n junction

穿通型pn结二极管的击穿电压

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To Measure Breakdown Voltage of PN Junction by Its Characteristic

利用PN结的C-V特性来测其击穿电压

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Breakdown voltage is one of the key properties for power semiconductor device.

击穿电压是功率半导体器件的重要参数之一。

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Through the relations of temperature-time, pressure-time and pressure-breakdown voltage, the relation between the breakdown voltage in different stages and time is derived.

通过金卤灯的温升时间关系、气压时间关系以及压力击穿电压的关系，得出了金卤灯在不同阶段的时间击穿电压的关系。

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