a-Si的例句大全

In this paper, the advantage of a-Si thin film technology, recent market situation, potential application areas, main problems and tendency of a-Si cells are reviewed in detail.

文章详述了a－Si薄膜太阳能电池的工艺优势、市场开发状况、可能应用领域、存在问题和展望。

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PLED ( polymer light emitting diode) and a-Si TFT ( amorphous Silicon thin film transistor) technology have made great progress in the past few years. Combination of two technologies is expected to be the mainstream of future flat televisions.

近年来，PLED（聚合物发光二极管）和a-Si TFT（非晶硅薄膜晶体管）技术取得了巨大进展，两者的结合有望成为未来平板电视的主流。

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The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

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The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.

a-Si∶H/sin x∶H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。

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Relationship between the thermal instability of a-Si cell and that of structural defects are analysed.

分析了电池热不稳定性机制及其克服办法。

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A Study on Unequilibrium Thermal Defect in Doped a-Si: H Films

掺杂a-Si∶H薄膜的非平衡热缺陷研究

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The thermal quenching of Er PL tends to decrease with an increase in the N concentration in Er doped a-Si: H.

随着N掺杂浓度的增加，Er PL的热猝灭效应下降。

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The initial dynamics of photogenerated carriers in a-Si: H/ a-SiN_x: H multilayers has been investigated with time-resolved laser spectroscopy. The mechanisms of thermalization and recombination of these carriers are analysed.

用时间分辨激光光谱学方法研究了a-Si：H/a-SiN x：H多层膜光生载流子初始动力学过程，分析了非平衡载流子的热释和复合机制。

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For an undoped and slight phosphorus doped hydrogenated amorphous silicon ( a-Si: H) film prepared by activated reactive evaporation, this paper points out the dependence of its photoconductivity on temperature and light intensity.

本文报告了用掺杂和轻度磷掺杂的活性反应蒸发，制备氢化作品硅的稳态光电导对温度及光强的依赖特性。

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The technical properties of a new generation of X-ray sensitive detectors& amorphous silicon ( a-Si) flat-panel detectors were introduced. The new detectors could be in lieu of the usual image intensifier in X-ray real-time radioscopic ( RTR) system for inspecting welds or castings.

介绍非晶硅（a-Si）平板探测器的技术特性，及其取代常用的图像增强器在焊缝和铸件的工业射线实时成像（RTR）检测中的应用。

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The stability evaluation and measurement on the spot for large area single junction a-si: h solar cell array

大面积单结a-Si：H太阳电池方阵现场稳定性的评价与测试方法

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The structure, preparation and properties of amorphous silicon ( a-Si) material were de-scribed. The application of a-Si in sensors, such as photodiode, colour sensor, X-ray sensor and stress sensor etc.

叙述了非晶硅半导体的结构、制备方法及特性，介绍了非晶硅在制作光电传感器、色敏传咸器、放射线（X射线等）传感器及应变传感器等方面的应用。

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The results show that as light wavelength increases, AC resistively of a-Si films first decreases, then increases, and decreases as power, temperature of bed plate, and rf-power increases.

结果表明，非晶硅薄膜的交流电阻率随照射光的波长增大而先减小后增大，随功率密度、衬底温度和射频功率的增大而减小。

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Si-H Bond and Photo-Induced Metastable Defects in a-Si: H Observation of Second Kind of Light-Induced Metastable Defects in Intrinsic Hydrogenated Amorphous Silicon

非晶硅中的硅氢键与光致亚稳缺陷a－Si∶H中第二类亚稳缺陷的观察

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New type of SiO_2 gate insulator a-Si TFT uncooled infrared detector

新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器

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AMPS modeling of light J-V characteristics of a-Si based solar cells

非晶硅太阳电池光照J-V特性的AMPS模拟

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SPICE Model in Sub-threshold Region for a-Si: H TFT

a-Si∶H TFT亚阈值区SPICE模型的研究

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The Subthreshold Characterization Parameter and Active Layer Thickness Effect over a-Si TFT

a-Si TFT亚阈特征参数与有源层的厚度效应

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The application of the design method to the a-Si/ poly Si tandem solar cells is discussed.

文中讨论了该设计方法在a-Si/Poly Si叠层太阳电池方面的应用。

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Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, Found that nanoscale silicon particles can be grown in thermally annealed a-Si ∶ H films and the sizes of the formed silicon particles change with the temperature ramp rate in thermal annealing processes.

用喇曼散射、X射线衍射和计算机模拟，发现在非晶硅中所形成的纳米硅颗粒的大小，随着热退火过程中升温速率的变化而变化。

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