1、

Modified MBE techniques ate presented such as migration-enhanced epitaxy ( MEE), interval growth and temperature switch.

介绍了迁移增强外延(MEE)、间隔生长和温度开关等改进的MBE技术。

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2、

At present, MBE and PLD are among very good film-developing technology, but their cost is too high, making it difficult to be pressed to film in a large size.

目前,比较好的成膜技术有分子束外延(MBE)和脉冲激光沉积法(PLD)。但成本太高,不能实现大面积成膜。

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3、

West Ham academy director Tony Carr receives an MBE in the Queen's Birthday List.

西汉姆学院总监卡尔在女王诞辰嘉奖名单中获得了英帝国勋章。

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4、

Improved on Pitch Period Calculation Based on MBE Model

基于MBE模型的基音周期估计算法改进

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5、

The paper has discussed three deducing methods for formula of acid-base titration error, through equation of CBE and MBE, equation of PBE, equilibrium relation of solution.

讨论了从CBE和MBE、PBE以及溶液本身平衡出发来推导滴定误差公式的三种不同方法。

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6、

Performance Comparison of GaAs/ AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

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7、

The analysis in situ of surface magneto-optic Kerr effect indicates that the Fe layer gives rise to an about 2ML thick magnetic dead layer at the interface of Fe/ NiO by MBE deposition.

表面磁光克尔效应的原位测试结果表明:通过MBE沉积的Fe原子层在FeNiO界面处产生了约2ML的磁死层;

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8、

The recent research development of Si/ HgCdTe by MBE was reported.

文章报道了Si基碲镉汞分子束外延(MBE)的最新研究进展。

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9、

Also, the ability, of performing the depth profile slowly allows the near surface of implants and MBE to be accurately portrayed by using Cs~+ and O_2~+ primary ions beam.

如若使用Cs~+和O2~+一次离子束缓慢地进行深度剖析也可以精细地描绘出离子注入及分子束外延表面附近的结构。

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10、

Born in1957 in Birmingham, Willard Wigan MBE began his artistic life at a tender age.

英帝国勋章获得者威拉德.维根在1957年出生于伯明翰,他小小年纪就开始了自己的艺术生涯。

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11、

Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.

液滴外延生长半导体材料是一种较为新颖的MBE生长技术,而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。

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12、

He has been made an MBE in the New Year Honours list.

他被列入新年受勋者名册,获授英帝国勋章。

《柯林斯高阶英汉双解学习词典》

13、

Besides, the mechanism of DP-MBE SAM can be extended to the scene analysis of more than two concurrent speech signals, and the parameters of the speech is a middle level present to communicate the low level auditory system and the high level brain.

另外,DP-MBE SAM机理可以推广到多于两个语音信号的场景分析。且代表语音的参数作为一组数字化信息更适合作为联系底层听觉系统和高层大脑的中层表达的要求。

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14、

MBE Growth of High Quality P Type GaAs Films

分子束外延高性能P型GaAs单晶薄膜

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15、

Band Edge Quadratic Electro-Optical Effect and Photorefractive Effect of Low Temperature-Growth MBE GaAs

低温分子束外延GaAs薄膜的带边二次电光效应和光折变效应

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16、

High power semiconductor laser stack arrays, grown by MBE have been prepared.

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。

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17、

Therefore ALE is also called "digital epitaxy". In comparison with conventional MBE and MOCVD, ALE offers advantages of greater thickness uniformity, fewer surface defects, less edge growth in selective epitaxy and monolayer control in sidewall epitaxy.

与传统的MBE和MOCVD相比,ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。

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18、

an improvement in mbe speech model analysis algorithm using b-spline wavelet transform

基于B-样条子波变换的MBE语音模型分析算法改进

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19、

fast pitch-refining algorithm in mbe model

MBE语音模型中快速基音细搜索算法的研究

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20、

an 800/ 920/ 1200bps modified speech coder based on the multi-band excitation ( mbe) speech model is presented.

该文介绍了基于多带激励(MBE)语音模型的改进型800/920/1200bps语音编码器。

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