effects of quantum confinement effect on the properties of exciton in sno_2 nanometer particles

quantum confinement is responsible for this result.

量子限域效应是导致这种结果的主要原因。

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the uv-visible absorption and photoluminescence spectra show the quantum confinement effect clearly.

紫外可见吸收光谱和光致发光荧光光谱清楚的显示出量子限域效应，同时也研究了量子点的时间分辨荧光光谱。

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amorphization of metal nanoparticles and the quantum confinement effect

非晶化与量子限域效应

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for the samples grown at different temperatures, shift of uv emission peaks is attributed to the effect of the quantum confinement due to different crystal grain sizes.

随着生长温度的变化UVE峰位蓝移与晶粒尺寸不同引起的量子限域效应相关。

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however, the absorption and the dispersion behaviors become the same as those of the lowest excitonic state in a single quantum well structure as the negative-bias voltage further increases due to the disappearance of quantum-confined stark effect.

而随负偏压进一步增加，由于量子限域Stark效应消失，其吸收与色散特性则与单量子阱最低激子态相类似。

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sps results indicated that the znfe_2o_4 nanocrystallines show obvious surface-interface and quantum confined effect with a certain capability of capturing the electron.

表面光伏特性研究显示ZnFe2O4纳米晶具有明显的表面界面效应和量子限域效应，有一定的捕获电子能力。

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the coupling effect and quantum limiting effect between mo and nanotube lead to red shift of absorption edge.

因Mo与纳米管间的耦合及量子限域效应，吸收边红移。

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obvious quantum confinement effect and large stokes shift are observed from the cds nrs.

CdS纳米棒呈现出明显的量子限域效应，并具有较大的斯托克位移现象。

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effect of zno nanoparticle structure on photo-electric quantum confinement properties of photogenerated charges

ZnO纳米粒子结构对光电量子限域特性的影响

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quantum confinement effect and laser scattering characteristic of zno nano-particles

纳米ZnO的量子限域效应和激光散射特性研究

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study on the quantum confined stark effect of ingaas/ inalas multiple quantum well structures

InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究

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as to the emission mechanism of si-based material, many models have been proposed, for example the quantum ( size) confinement effect model, the surface recombination center model and the quantum confinement-surface recombination model.

关于硅基发光的机制，人们曾提出很多模型，如量子（尺寸）限制效应模型、表面复合模型以及秦国刚等人提出的量子限制效应&表面复合模型等。

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quantum confinement effect in different shaped quantum wells

不同形状量子阱的量子限制效应

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in the optical device arena, sic was regarded as a promising substitute for si. sic nanoparticles have attracted much attention due to their unique optical and electrical properties arising from the quantum confinement effect.

在发光器件领域，SiC被认为是替代Si的理想材料，SiC量子点由于量子限制效应而导致的独特光电性能倍受人们的青睐。

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in this paper, quantum well effect, exciton binding energy and the formation of excitonic peak are discussed.

讨论了量子阱限制效应、激子的束缚能以及激子峰的形成，分析了量子阱的光电特性及量子阱表面光电压的形成和特点。

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spectrophotometric measurements were performed for these samples in ultraviolet, visible and near-ir region, and show obvious blue-shift of the optical band gap as large as 1.0-2.0 ev in comparison with the bulk, which can be explained by quantum confined effect.

紫外可见光光谱分析表明，这类纳米结构薄膜具有1.0～2.9eV的光学带隙蓝移，并可用量子限制效应来解释其起源。

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nano-silicon structure has many optoelectronic characteristics differ from bulk silicon due to its quantum confinement effect. it show extensive application prospect in light-emitting device, light-detector, optoelectronic integrated device, and sensor.

硅纳米结构由于量子限制效应有许多不同于体硅的光学及光电性能，它在发光器件、光探测器件、光电集成器件以及传感器等领域有广阔的应用前景。

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the energy shifts due to the strain and quantum confinement are calculated on the basis of deformation potential theory and bastard's method, showing good agreement with the experimental results.

理论上分析计算了由应变和量子限制效应引起的自由激子的峰位移动，理论和实验符合很好。

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experimental results indicate that the red pl consists of wide band, which originates from quantum confinement effect, and the distinguishable peaks are related to o impurities.

结果表明：红光包括起源于量子限制效应的宽带及氧缺陷能级引起的分立峰；

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porous silicon possesses special micro-structure and evident quantum confined effect, in which lots of researchers are interested and have done a large number of works about it.

多孔硅拥有独特的物理微结构和显著的量子限制效应，其结构和光学特点引起了众多科研者的广泛兴趣和大量研究。

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