ftir and eels results also showed that the bn mainly existed in the form of hexagonal structure.

1、

the cubic boron nitride ( c-bn) thin films were deposited on p-type si ( 100) substrates by means of radio frequency sputtering.

用射频溅射法将立方氮化硼（C-BN）薄膜沉积在p型Si（100）衬底上，薄膜的成分由傅里叶变换红外吸收谱和X射线衍射谱标识。

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2、

the synthesis of cbn by using mg-mg_3n_2 as catalyst

用触媒Mg-Mg3N2合成立方氮化硼

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3、

well distributed ti coatings were formed on the surface of cbn grits by means of magnetron sputtering method.

通过磁控溅射及其后处理等方法在立方氮化硼（简写cBN）表面形成均匀的Ti镀层。

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4、

study on composite materials sintered by mo clad cbn and vitrified ceramics synthesis of cubic boron nitride

Mo涂层的立方氮化硼（cBN）与玻化陶瓷复合烧结体的研究立方氮化硼的合成

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5、

effect of boron oxide on the growth of cubic boron nitride in mg-bn system

Mg-BN系中B2O3对立方氮化硼生长的影响

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6、

cubic boron tool material and its production, application and development

立方氮化硼（CBN）工具材料及其生产、应用现状与发展趋势

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7、

study on cubic boron nitride films deposited by thermal filament assisted rf plasma cvd

热灯丝辅助射频等离子体CVD法生长立方氮化硼膜的研究

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8、

dft calculations of equation of state and bulk modulus of cubic boron nitride

用DFT计算立方氮化硼的状态方程及体积模量

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9、

investigation on effect of the cvd temperature onto synthesis of boron nitride nanosphere

CVD反应温度对氮化硼纳米球体制备的影响

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10、

from the observation of cbn crystals growth within the sample capsule, the temperature gradient distribution has been discussed.

同时由合成后样品中立方氮化硼的生成区域对V型生长区温度梯度分布进行了分析讨论。

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11、

layered boron nitride is a structural analogue of graphite in which alternating b and n atoms substitute for c atoms.

层状氮化硼与石墨结构类似，就像石墨中的碳原子被交替的B和N原子替换。

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12、

in this paper we mainly study preparation, properties and n-type doping of cubic boron nitride thin films.

本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。

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13、

influences of b_2o_3 on the synthesis of cbn

B2O3对合成立方氮化硼的影响

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14、

theoretical study on adsorption of co on novel pt-doped bn nanotube

铂掺杂氮化硼纳米管及CO在其表面的吸附行为的理论研究

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15、

the metal films have been discovered on synthesised cbn surface.

在立方氮化硼的合成过程中发现了金属膜；

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16、

this paper mainly introduced the properties and applications of superhard material cutting tools, including monocrystalline diamond tool, polycrystalline diamond tool, polycrystalline cbn ( pcbn) tool and cvd diamond film tool.

本文主要介绍了单晶金刚石刀具，高温高压合成的聚晶金刚石（PCD）刀具，聚晶立方氮化硼（PCBN）刀具及化学气相沉积的金刚石膜（CVD）刀具的特性及应用。

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17、

small quantity for local delivery

小量当地零发料

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18、

at present, most of gan-based devices are fabricated on sapphire.

目前氮化镓基器件大多数制作在蓝宝石上。

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19、

influence of threading dislocations on physical properties of gan epilayers

氮化镓材料中的位错对材料物理性能的影响

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20、

preparation of gan ceramic under high temperature and high pressure

高温高压下氮化镓陶瓷体的制备

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