Study of etching performance of infrarad material Ge

After resin embedding, frozen ultrathin slicing, and etching, the morphology of dispersed phase was observed by SEM.

分散相形态纺程演变：经树脂包埋、冷冻切片、刻蚀后，采用SEM观察分散相形态。

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The Absorption of CaO to Waste Gas from Plasma Etching by Emission Spectrometry

发射光谱法研究CaO对等离子体刻蚀废气的吸收作用

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The corrosion depth increases with the increasing number of scratching cycles.

刻蚀深度随刻划次数的增加而增大。

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Simulation of X-ray Lithography Mask Distortion during Back-etching

X射线光刻掩模背面刻蚀过程中的形变仿真

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Application of Cr Mask in Si Wet Etching

Cr掩模在硅湿法刻蚀中的应用研究

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Photolith and reactive ion etching techniques are used for grating fabrication on silicon nitride film. The equal light density Dammann grating with 65 × 65 spot arrays are fabricated successfully.

在氮化硅膜上进行光栅图形的光刻和反应离子刻蚀，成功研制出65×65等光强分束Dammann光栅。

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Study on Reactive Ion Etching of Silicon in SF_6/ O_2/ CHF_3 Mixtures

SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究

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A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors ( CRLA) was designed and fabricated by using reactive ion etching ( RIE).

采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的10单元InGaAs应变层单量子阱镇相列阵激光器。

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Magnetically Enhanced Reactive Ion Etching of Ferroelectric PbZr_ ( 0.53) Ti_ ( 0.47) O_3 Thin Film

铁电PbZr（0.53）Ti（0.47）O3薄膜的磁增强反应离子刻蚀

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The etching method is a key process during the fabrication of all-NbN superconductor tunnel junctions. In order to make high quality junctions we have done some researches on reaction ion etching ( RIE) method and ion etching method.

在制备所有的NbN超导隧道结的过程中，为了得到良好的隧道结，刻蚀是很关键的一步，我们对反应离子刻蚀（RIE）和离子刻蚀两种不同的方法进行了研究比较。

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The gated silicon field emitter arrays ( FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching ( IBE) and reactive ion etching ( RIE).

利用离子束刻蚀（IBE）和反应离子刻蚀（RIE）等干法刻蚀方法来制造带栅极的场发射阴极阵列。

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A bi-layer mask process is proposed and the technique of magnetic enhanced reactive ion etching ( MERIE) of SiC was studied to determine the optimal processing parameters.

提出了一种使用双层掩膜刻蚀SiC的方法，对磁增强反应离子刻蚀（MERIE）SiC的工艺进行了详细研究，得到了刻蚀的优化参数，为SiC热辐射器件的制作打下基础。

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The research of reaction ion etching and ion etching methods

反应离子刻蚀与离子刻蚀方法的研究与比较

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Differential Hall effect ( DHE) characterization has been carried out on ultra-shallow p+ n junctions fabricated by plasma doping and ion implantation. Low-power reaction ion etching ( RIE) has been employed for the ultra-thin Si layer stripping.

用反应离子刻蚀（RIE）剥层的微分霍耳法（DHE）对等离子体掺杂、离子注入制备的Si超浅p+n结进行了电学表征。

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This paper describes the principle of end point monitoring of the plasma etch and the reactive ion etch for LSI by the optical reflection, and implementation of the optical reflection.

叙述了用光学反射法在线监测LSI等离子及反应离子刻蚀过程和终点的监测原理与具体实施。

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The Reactive Ion Etching of Bi_2Ti_2O_7 Thin Films on Silicon Substrates and Its Image in Atomic Force Microscopy

Bi2Ti2O7薄膜的反应离子刻蚀及原子力显微镜研究

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The optical rib waveguides are designed and fabricated with SIMOX SOI wafers, using inductive coupled plasma reactive ion etching ( ICPRIE) process.

采用电感耦合反应离子刻蚀制备SOI脊形光波导器件，并给出了工艺流程。

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The measured half width of photoluminescence spectrum in the active area is 0.032 eV with the wavelength of 815.33 nm.

采用先进的LPE及反应离子刻蚀等微细加工技术制作了盘型－图钉式微腔结构，测得其有源区的光荧光谱的半宽度为0.032eV，波长为815.33nm。

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GaAs/ AlGaAs quantum dots were made by Electron Beam Lithography ( EBL) and Reactive Ion Etching ( RIE) on GaAs/ AlGaAs quantum well wafers. Their photoluminescence shows blue shift, the amount of blue shift increases with the decrease of quantum dot size.

采用电子束曝光和反应离子刻蚀的工艺，将GaAs／AlGaAs量子阱外延材料制成量子点阵，其光荧光谱显示出蓝移，并且蓝移量随着量子点直径尺寸的减少而增大。

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In this paper the etching ( RIE) of poly-Si of the electron cyclotron resonance ( ECR) reactive ion using CF 4 and Ar was reported.

报道了用CF4和氩气Ar作为工作气体的ECR反应离子刻蚀多晶硅（Poly Si）技术。

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