MEMS mechanical quantity sensor is micro-electromechanical device with high adaptive capacity to environment. Parameters such as velocity, acceleration, swing angle and tilt angle of dynamic particle can be measured by three-dimensional MEMS mechanical quantity sensor.

ZnO is a direct wide band-gap compound semiconductor. Due to abundant material and low cost, ZnO is considered as a promising material instead of GaN for short-wavelength optoelectronic devices.

ZnO作为直接宽禁带化合物半导体，由于原料丰富、价格低，有望取代GaN应用于短波长光电器件。

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ZnO is a new type of short-wavelength light emitting device material, and the key to make use of the ZnO-based optoelectronic devices is to prepare n-type and p-type ZnO films with the excellent properties.

特别是在光电领域，ZnO是一种新型的短波长发光器件半导体材料，制备可控的n型和p型ZnO晶体薄膜是实现ZnO基光电器件应用的关键。

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In order to develope ZnO-based optoelectronic devices, the preparation of p-ZnO with good optical and electrical properties is essential.

制备高光电性能的p-ZnO，是ZnO基光电器件走向实用化的基础和先决条件。

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Since micro electronic technology technique and MEMS technology were intro-duced to the fabrication of thermoelectric devices, the thermoelectric micro-devices have drawn more and more attention.

随着微电机系统（MEMS）技术、微电子技术引入温差电器件的制造，微型温差电器件吸引了越来越多的注意。

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Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device

通过倾斜多晶硅p-n结光电器件提高光电转换性能

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As a powerful rival of conventional Si-based structure, the ferroelectric-semiconductors with heterostructure have a great application potential in modern integrated ferroelectrics-based devices.

铁电-半导体异质结构作为传统Si基结构的有力竞争者，在现代集成铁电器件领域的应用越来越广。

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Based on the steady conduction equation, thermodynamic process has been analyzed. Temperature function, output power and generating efficiency of p and n semiconductor are obtained.

从稳态的热传导方程出发，对发电器件进行了热力学分析，推导出P型和N型半导体内部的温度分布函数及输出功率和发电效率的表达式；

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SiGe/ Si Heterostructure Optoelectronic Devices

SiGe／Si异质结光电器件

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An On-chip Testing Method for Measurements of Friction and Wear in Moveable MEMS Devices

可动微机电器件摩擦磨损测试方法研究MEMS器件建模与仿真分析方法研究

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Based on these characteristics, ZnO has potential applications in short wavelength photoelectric devices.

基于这些性质，ZnO在短波长光电器件方面具有重要的应用前景。

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Remove light bulb for marker light.

拆下示宽灯的灯泡。

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Secure light bulb for marker light with the two fastening screws.

用两个紧固螺钉固定示宽灯的灯泡。

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The intention of providing this control is to show how to use an HID output report.

提供这种控制的意图在于展示如何使用高强度氙气前大灯的输出报告。

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Remove control unit for gas-discharge headlight.

拆下氙气大灯的控制单元。

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Bi-xenon headlights, dynamic headlight range adjustment, with fixed bending light.

双氙气大灯，照明范围自动调节，带静态弯道照明。

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NOTE: RH front and RH rear height sensors fitted to vehicles with Xenon headlamps have a white stripe across the back face of the sensor housing for identification.

注：RH前、RH高度传感器装在后面有氙气大灯的汽车上有一道白色条纹在背上面对传感器住房，以便确认。

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The latest development of the advanced international level of HID auto lighting system Xenon headlamps.

最新研制具有国际先进水平的HID汽车氙气大灯照明系统。

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Electric-powered die height adjusting system, digital show;

装模高度机动调节，数字显示；

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Self-regulation system for height of label-affixing machine of cigarette boxes

贴标机高度自动调节系统的研制

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High strength aluminium material, height can tune up.

高强度铝合金型材，高度可调节。

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