High quality ITO transparent conductive film was prepared by reactive low voltage ion plating technique, which is different to the most common sputtering method to deposit ITO film.

Study of single layer inhomogeneous Ge_ ( 1-x) C_x antireflection coating prepared by reactive low voltage ion plating technique

用低压反应离子镀的方法制备Ge（1-x）C x单层非均匀增透膜的研究

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Preparation of ITO films by reactive low voltage ion plating

低压反应离子镀方法制备ITO透明导电膜

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Physical process of reactive low voltage ion plating

低压反应离子镀的物理过程

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The influence of the activating source power on tin coatings deposited on the matrix of HSS by reactive sputtering ion plating

活化源功率对高速钢基体反应溅射离子镀TiN涂层的影响

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Study on the Properties of Corrosion Resistance of Palladium Film on Titanium Substrate Formed by Reactive Ion Beam Plating

钛表面反应离子束镀钯膜的耐腐蚀性

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Plasma physics of optical film deposition by reactive ion plating

离子镀光学薄膜的等离子体物理过程

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Plasma Ion Source for Low Voltage Reactive Ion Plating

低压反应离子镀等离子源的研制

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A Mathematical Model for Optical Films Deposited by Reactive Ion Plating

等离子体镀光学薄膜的数学模型

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This article mainly describes the preparation of ZnO thin films with highly orientation using RF reactive ion plating, RF reactive sputtering, MOCVD, and laser-assist evaporation, etc.

本文主要叙述采用RF反应离子镀、RF反应溅射、MOCVD和激光辅助蒸发等方法制备高度取向的ZnO薄膜。

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A Study on Optical Coatings by Reactive Ion Plating

光学薄膜反应离子镀技术研究

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The deep reactive ion etching device is mainly applied to etching Si materials in the MEMS fabrications area.

深反应离子刻蚀（DRIE）设备，主要应用于MEMS器件制造中Si材料的深槽刻蚀[1]。

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Reactive Ion Etching of Sol Gel Derived PZT Ferroelectric Thin Films and Pt/ Ti Bottom

Sol-Gel法制备的铁电薄膜和Pt/Ti下电极的反应离子刻蚀技术

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Hardware's interface electrocircuit and designing idea of the reactive ion etching machine is explained in this thesis.

本文详细讨论了计算机控制的反应离子刻蚀机各个部分的硬件接口电路和设计思想。

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The development of soft X-ray CZP included design of optical path, selection of material, preparation of thin film, sub-micron lithography, X-ray lithography, reactive ion etching, ion beam etching, electroplating and chemical etching.

软X射线聚焦波带片的研制包括光路设计、膜系设计、衬底选择、薄膜制备、亚微米光刻、X射线光刻、反应离子刻蚀、离子束刻蚀、电镀和化学腐蚀等多种微细加工技术。

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The means of fabricating computer optical element ( COE) are discussed. The new developments of gray-level mask, reactive ion beam etching and laser direct-writing in fabricating process are emphasized, and the application of COE in the space-focusing implement and lidar are introduced.

论述计算机光学元件制作的方法，着重介绍了灰度掩模技术，反应离子束刻蚀法和激光直写技术，并且说明了其在空间聚焦器上和激光雷达上的新应用。

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The silicon wafers were highly polished by reactive ion beam etching ( RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropriate hours.

利用反应离子束蚀刻（RIBE）对基片进行抛光，使得键合表面达到2nm级的表面粗糙度.在大气的环境下将处理过的玻璃、Si基片干燥，进行预键合。

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Reactive ion beam etching process is one of the ultrafine machining techniques which have been rapidly developed in recent years. Patterns on the working pieces are made by sputtering effects and chemical reaction which occur when reactive ion beam bombard the solid surface.

反应离子束刻蚀技术是近年来发展起来的一种微细加工技术，它利用反应离子束轰击团体表面时发生的溅射效应和化学反应剥离加工工作上的几何图形。

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Reactive ion beam etching technique has been effectively used to study and fabricate large-scale and ultra large scale integrated circuit, acoustic surface wave device, magnetic bubble device microwave device, integrated optical circuit, superconducting device, shimmer optical pattern etc.

反应离子束刻蚀技术已有效地用于研究和制造大规模和超大规模集成电路，声表面波器件，磁泡存储器，微波器件，集成光路，超导器件，闪烁光栅等。

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The SiO2 holographic blazed grating with good quality and high diffraction efficiency have been developed by reactive ion beam etching and holographic grating mask made by lensless Fourier transform holography recording.

本文报道以无透镜傅里叶全息术变换记录的全息光栅作掩膜，应用反应离子束入射角控制光栅闪耀角，选择了合适刻蚀工艺参数，制得衍射效率为67%的SiO2全息闪耀光栅。

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The results on fabrication of refractive microlens arrays using heat forming and reactive ion beam etching ( RIBE) techniques are presented.

提出一种微透镜阵列复制的新方法反应离子束蚀刻法（RIBE）。

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