The technology of DC-DC converter integrates several techniques including theory on the DC-DC converter, Integrated Circuit ( IC) design, power semiconductor device technology and so on.

1、

A large number of EAF generated high-order harmonic, APF inject to grid with amplitude equal and the opposite phase current harmonic the power with controllable power semiconductor devices.

电弧炉正常工作时产生大量高次谐波，APF即利用可控的功率半导体器件向电网注入与谐波源电流幅值相等、相位相反的电流，使电源的总谐波电流为零，达到实时补偿谐波电流的目的。

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2、

In recent years High-power Laser Diode Arrays-HLDA has been used widely in the industrial, military fields as pumping source of solid-state lasers or direct light source.

近些年，大功率半导体激光器阵列（High-power Laser Diode Arrays-HLDA）作为固体激光器泵浦光源或直接光源在工业、军事等领域中得到越来越广泛的应用。

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3、

High Power Diode Laser Cladding Aggregate Tungsten Carbide-Ni Based Superhard Composites

高功率半导体激光熔覆絮状WC-Ni基超硬复合材料

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4、

In order to compatible with low-voltage circuit, novel LDMOS with thin epitaxy layer is a developing trend.

为了与低压电路在工艺上更好地兼容，设计具有薄外延层且能满足一定耐压的新型LDMOS是目前功率半导体技术的一个重要发展方向。

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5、

Study on output characteristic of diode-side-pumped high power YAG laser

200W高功率半导体泵浦固体激光器输出特性研究

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6、

A new type locomotive load test rig, the dry resistance test rig, is designed by applying the new power device IGBT and PWM control technic.

应用全控型大功率半导体开关元件IGBT及PWM控制技术，设计一种新型的机车负载试验台干阻试验台。

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7、

SOI LDMOS device is a new type power semiconductor device which developed on the basis of LDMOS device.

SOI LDMOS器件是基于LDMOS器件的一种新型功率半导体器件。

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8、

The line array of high power laser diodes can simplify the structure of prototyping machine, reduce the costs, improve the processing precision and decrease the size.

利用高功率半导体激光器线阵替代CO2激光器和YAG固体激光器，作为快速成型机的能量源，可以简化成型机的结构，降低成本，提高加工精度，减小成型机的体积。

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9、

Application of High Power Solid State Switch DSRD in UWB Radar

高功率半导体开关DSRD在UWB雷达中的应用

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10、

A high power continuous wave 1.34 μ m Nd ∶ GdVO 4 laser end pumped by laser diode array with plano concave resonator was reported.

报道了利用光纤耦合大功率半导体激光器（LD）抽运Nd∶GdVO4晶体，采用平凹谐振腔，输出134μm波长的高功率连续波固体激光器。

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11、

In order to make the high power laser beam meet the illumination requirement, the beam divergence always need to be changed.

为了满足大功率半导体激光束在照明领域的应用要求，经常需要对LD光束发散角进行变换。

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12、

The paper introduces the operation principle and key technology of the Integrated Gate Commutated Thyristor ( IGCT).

阐述了新型功率半导体器件&集成门极换向型晶闸管IGCT（Integrated Gate Commutated Thyristor）的基本工作原理和关键设计技术。

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13、

With the development of power device, the active PFC technology has also made considerable progress.

随着功率半导体技术的发展，有源PFC技术也取得了长足的进步。

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14、

High power semiconductor laser stack arrays, grown by MBE have been prepared.

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。

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15、

MOCVD Growth of Carbon Doped GaAs/ AlGaAs High Power Semiconductor Lasers

MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

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16、

The di/ dt Limit Values of Hi-Speed and Hi-Power Semiconductor Switch RSD

高速大功率半导体开关RSD的di/dt耐量极限值

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17、

High Power Semiconductor Lasers of New Window on Insulation Film of Al_xN_y

基于Al xN y绝缘介质膜的新型窗口大功率半导体激光器

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18、

Design and Research of Pulse Transformer for RSD ′ s Trigger

大功率半导体开关RSD触发用脉冲变压器的设计与研究

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19、

Characteristics Analysis of GaAs Based High Power Semiconductor Laser and High Brightness LED

GaAs基大功率半导体激光器和高亮度发光二极管特性分析

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20、

Research and Development of Control System for High Power Diode Laser Based on PLC

基于PLC的大功率半导体激光器控制系统的研制

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